The Design Solution B.U. offers ASIC and embedded IP products, which are semiconductor-related components that require a relatively high level of customization.

<A team of professionals>
In addition to our role as a sales representative, we are also a design center composed of engineers with superior knowledge and experience.
Nowadays, the increasing degree of complexity and integration of circuits makes it more and more important to provide support to achieve efficient design. Our company design engineers offer customers the services in terms of design in several levels, from the specifications level to netlist, enabling large scale ASIC's containing over 10 million gates to operate correctly in the first engineering sample.

<ASIC line-up to meet a large variety of needs>
As the trend towards process shrinkage continues, the development of ASIC is becoming more difficult due to large initial costs. However, we are able to provide 90/45nm ASIC products by eASIC® without any mask cost. These products can operate at higher speeds and show lower power consumption compared with High-End FPGAs.

For high-volume customers, we can also propose low-price cell-based products. Our platform and rich line-up of IP's enables customers to significantly reduce development costs and cut project lead times.

<High-Performance IP’s for 40nm processes and beyond>
We have high-performance IP's for 90, 65, 45/40nm processes and beyond. The wide range of IP's addressing a variety of customer needs and our specialized knowledge and skill in SoC design makes IP integration easy and reduces turn-around time.

The high-speed IO offered by Rapid Bridge® is High-Quality and Silicon-Proven IPs on TSMC 90/65/40nm processes.
PHY:DDR2/3, mDDR, GDDR, USB 2.0/3.0, HDMI™ 1.3 (TX), etc.
SerDes PHY:PCI Express® Gen1/2, Serial RapidIO®, XAUI, SATA, etc.

Novelics provides high-speed, ultra-high density, ultra-low-power memory IP's compatible with 180-40nm processes of several foundries. The 1TSRAM is a low-power, 1GHz device (90nmG) that can be manufactured through standard CMOS processes and enables significant area reduction compared to conventional 6TSRAM.